Semimetal-antiferromagnetic insulator transition in graphene induced by biaxial strain
نویسندگان
چکیده
منابع مشابه
Insulator to Semimetal Transition in Graphene Oxide
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduce...
متن کاملSymmetry induced semimetal-semiconductor transition in doped graphene
Substitutional chemical doping is one way of introducing an electronic bandgap in otherwise semimetallic graphene. A small change in dopant arrangement can convert graphene from a semiconducting to a semimetallic state. Based on ab initio Density Functional Theory calculations, we discuss the electron structure of BN-doped graphene with Bravais and non-Bravais lattice-type defect patterns, iden...
متن کاملHigh Pressure Induced Insulator-to-Semimetal Transition through Intersite Charge in NaMn7O12
The pressure-dependent behaviour of NaMn7O12 (up to 40 GPa) is studied and discussed by means of single-crystal X-ray diffraction and resistance measurements carried out on powdered samples. A transition from thermally activated transport mechanism to semimetal takes place above 18 GPa, accompanied by a change in the compressibility of the system. On the other hand, the crystallographic determi...
متن کاملStrain-induced topological insulator phase transition in HgSe
Lars Winterfeld,1,2 Luis A. Agapito,1 Jin Li,1 Nicholas Kioussis,1,* Peter Blaha,3 and Yong P. Chen4 1Department of Physics, California State University, Northridge, California 91330-8268, USA 2Institut für Physik, University of Technology Ilmenau, 98684 Ilmenau, Germany 3Institute for Materials Chemistry, TU Vienna, A-1060 Vienna, Austria 4Department of Physics, Purdue University, West Lafayet...
متن کاملBiaxial strain in graphene adhered to shallow depressions.
Measurements on graphene exfoliated over a substrate prepatterned with shallow depressions demonstrate that graphene does not remain free-standing but instead adheres to the substrate despite the induced biaxial strain. The strain is homogeneous over the depression bottom as determined by Raman measurements. We find higher Raman shifts and Gruneisen parameters of the phonons underlying the G an...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2012
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.86.155436